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| AOD606 Complementary Enhancement Mode Field Effect Transistor General Description The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD606 is Pbfree (meets ROHS & Sony 259 specifications). AOD606L is a Green Product ordering option. AOD606 and AOD606L are electrically identical. TO-252-4L D-PAK D1/D2 Features n-channel p-channel -40V VDS (V) = 40V ID = 8A (V GS=10V) -8A (V GS = -10V) RDS(ON) RDS(ON) < 33 m (VGS=10V) < 50 m (VGS = -10V) < 70 m (VGS = -4.5V) < 47 m (VGS=4.5V) D1/D2 Top View Drain Connected to Tab G1 S1 G2 S2 n-channel S1 G1 S2 G2 p-channel Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 VGS Gate-Source Voltage 20 Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Max p-channel -40 20 8 8 -30 -8 30 50 25 2.5 1.6 -55 to 175 Typ 17.4 50 4 16.7 40 2.5 Max 30 60 7.5 25 50 3 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TC=25C 8 8 30 8 20 20 10 2 1.3 -55 to 175 Symbol RJA RJC RJA RJC Device n-ch n-ch n-ch p-ch p-ch p-ch Repetitive avalanche energy L=0.1mH Power Dissipation Power Dissipation B TC=100C TA=25C TA=70C A TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Case B C/W C/W C/W C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD606 N-Channel MOSFET Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=32V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 30 27 39 37 25 0.76 1 8 404 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 95 37 2.7 9.2 VGS=10V, VDS=20V, ID=8A 4.5 1.6 2.6 3.5 VGS=10V, VDS=20V, RL=2.5, RGEN=3 IF=8A, dI/dt=100A/s 6 13.2 3.5 22.9 18.3 33 52 47 2.3 Min 40 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0: January 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD606 N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 50 Normalized On-Resistance 45 RDS(ON) (m) 40 35 30 25 20 0 4 8 12 16 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=8A 1.0E+00 1.0E-01 IS (A) 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=4.5V ID=6A VGS=10V ID=8A VGS=3.5V 5 25C 0 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 10V 5V 4.5V 4V ID(A) 10 125C 20 VDS=5V 15 VGS=4.5V VGS=10V 100 90 80 70 RDS(ON) (m) 60 50 40 30 20 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C Alpha & Omega Semiconductor, Ltd. AOD606 N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 200 10s 100s 1ms 10ms 1.0 DC 40 0 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Power (W) 160 120 80 TJ(Max)=175C TA=25C VDS=20V ID=8A Capacitance (pF) 700 600 500 400 300 200 100 0 0 5 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 10 15 40 Coss Crss Ciss TJ(Max)=175C, TA=25C RDS(ON) limited 10.0 ID (Amps) 0.1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=7.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton T 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD606 N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 ID(A), Peak Avalanche Current Power Dissipation (W) 0.001 8 6 4 2 0 0.00001 0.0001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability TA=25C 25 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) tA = L ID BV - VDD 10 8 Power (W) 6 4 2 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 50 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TA=25C Current rating ID(A) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse Ton 0.001 0.01 0.1 1 10 T 100 1000 0.01 0.001 0.00001 0.0001 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. AOD606 P-Channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-4A Forward Transconductance VDS=-5V, ID=-8A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-32V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-8A TJ=125C -1 -30 35 62 55 16 -0.75 -1 -8 657 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 143 63 6.5 14.1 VGS=-10V, VDS=-20V, ID=-8A 7 2.2 4.1 8 VGS=-10V, VDS=-20V, RL=2.5, RGEN=3 IF=-8A, dI/dt=100A/s IF=-8A, dI/dt=100A/s 12.2 24 12.5 23.2 18.2 70 50 -1.8 Min -40 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0 : January 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD606 P-Channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) 30 -10V 25 -6V 20 -ID (A) 15 10 -3V 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics -ID(A) VGS=-4V 15 -5V -4.5V 20 25 VDS=-5V 10 -3.5V 5 25C 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics 125C 80 Normalized On-Resistance 70 RDS(ON) (m) 60 50 40 30 20 0 12 16 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 4 8 VGS=-10V VGS=-4.5V 1.80 VGS=-10V ID=-8A 1.60 1.40 VGS=-4.5V ID=-6A 1.20 1.00 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 120 ID=-8A 100 1.0E+01 1.0E+00 125C 1.0E-01 RDS(ON) (m) -IS (A) 80 125C 1.0E-02 1.0E-03 25C 1.0E-04 60 25C 40 1.0E-05 1.0E-06 4.00E+00 6.00E+00 8.00E+00 1.00E+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 20 2.00E+00 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AOD606 P-Channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) 10 VDS=-20V ID=-8A Capacitance (pF) 1200 1000 800 600 400 Coss 200 0 0 8 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 4 16 0 Crss 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Ciss 8 -VGS (Volts) 6 4 2 0 100.0 T J(Max)=175C, T A=25C 10s 200 160 Power (W) 120 80 40 0 0.0001 T J(Max)=175C T A=25C -ID (Amps) 10.0 RDS(ON) limited 100s 1.0 DC 1ms 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 10 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=T on/T T J,PK =T C+PDM.ZJC.RJC RJC=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD T on Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD606 P-Channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) 10 -ID(A), Peak Avalanche Current 8 Power Dissipation (W) L ID tA = BV - V DD 60 50 40 30 20 10 0 6 4 TA=25C 2 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability T CASE (C) Figure 13: Power De-rating (Note B) 10 8 6 4 2 0 0 25 50 75 100 125 150 175 T CASE (C) Figure 14: Current De-rating (Note B) 10 ZJA Normalized Transient Thermal Resistance Power (W) 60 50 40 30 20 10 0 0.001 TA=25C Current rating -ID(A) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse Ton 0.01 0.1 1 10 T 100 1000 0.01 0.001 0.00001 0.0001 0.001 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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